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| MMBTSC2413 NPN Silicon Epitaxial Planar Transistor High frequency amplifier transistor. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 40 25 5 50 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Collector Base Cutoff Current at VCB = 24 V Emitter Base Cutoff Current at VEB = 3 V Collector Base Breakdown Voltage at IC = 50 A Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 50 A Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Gain Bandwidth Product at VCE = 6 V, -IE = 1 mA, f = 100 MHz Output Capacitance at VCB = 6 V, f = 1 MHz Symbol hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) fT Cob Min. 82 40 25 5 100 - Typ. 300 1.3 Max. 180 0.5 0.5 0.3 2.2 Unit A A V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 17/04/2009 MMBTSC2413 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 17/04/2009 |
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